The main aim of the proposed research is to find driving mechanism governing the resistive switching (RS) observed in graphene oxide (GO). In particular we would like to verify currently existing hypothesis describing the RS in GO in terms of: (i) oxygen ion migration, (ii) charge transfer to/from the GO, (iii) metallic ion migration and (iv) formation of conducting filaments. The verification of these hypothesis will be possible after accomplishing series of experimental tasks, the most important of which is to develop method of controllable introduction of defects (sp3, oxygen and nitrogen groups) into graphene. This should allow us to control oxidation level (or in general defective level) and quality of the sample which seems to be the biggest experimental problem in currently conducted research. We will also attempt to develop methods of introduction of mono-type oxide groups into graphene. Then we plan to: (i) investigate the RS in macro- and nanoscale in GO characterised by different density and type of introduced defects, (ii) investigate the crystallographic and electronic structure of GO and (iii) investigate influence of temperature, humidity, atmosphere type and its pressure, metallic electrode type and insulating spacers on the RS in GO.

According to our knowledge till now there is no clear explanation of observed RS in the GO. It is even not certain what type of conductivity governs transport properties in this material. Our main aim in this project is to find driving mechanism behind the RS in GO. As a result of the project realisation we will increase our knowledge and in consequence influence science and technology. In particular the new knowledge will be the basis for design of a new types of non-volatile memory ReRAM based on the RS phenomena. In such memories no power consumption will be used to keep information. In contrast to already proposed RAM modules new memories based on GO will be transparent and flexible due to graphene and GO properties. Thus, our investigation will influence on progress in, very important for nowadays society, field of mobile electronics.