The project aims to focus on the issues of synthesis and complementary characterization of the heterostructures built by the combination of two Dirac materials – graphene and topological insulator. First the scope of the project will be to gather the fundamental knowledge related to synthesis processes and mechanisms responsible for the creation of such multilayer materials. Additionally the possibility of using graphene as an anticorrosive protection of topological insulator will be determined. The investigations planned will allow to show how the interactions between the materials building the heterostructure influence the electronic properties and charge transport in the new complex system. In order to achieve these goals the systems of graphene/Bi 2 Se 3 and graphene/Bi2Te3 will be developed. The comprehensive control and adjustment of layer deposition processes will allow for the synthesis of materials with desired electronic properties. The verification of the above hypotheses will be possible due to the combination of complex experimental investigations supported by the calculations in the frame of density functional theory.

The planned research will lead to gathering the knowledge related to the growth of hybrid Dirac materials, corrosion process and the fundamental phenomena responsible for the electronic structure properties and spin polarized charge carriers transport in the graphene/topological insulator systems. The proposed research will allow to understand the interaction occurring between the materials in which the charge carrier transport is described by quantum electrodynamics equations. The results of the project in the future will enable designing hybrid systems with desired properties. This will allow for progress in electronics and spintronics and in a wider perspective may lead to the development of the new generation of computer systems - the quantum computers.