The main aim of the proposed research is to investigate electronic structure of bilayer hybrid materials composed of bismuth and antimony alloys grown in black phosphorus structure with graphene and single-layer MoS2. In particular we intend to investigate in what way manipulation of the electronic structure of one of the hybrid components influences its final properties. In order to find the answer to this question we plan to investigate two sets of hybrid materials. The first one containing graphene as one of the layers – material characterized by semimetallic properties. In the other one graphene will be substituted by single-layer MoS2 – characterized by semiconducting properties. Both materials will serve as substrates for Bi1-xSbx growth in black phosphorus structure (bilayers characterized by covalent bonds within bilayer and van der Waals bonds between bilayers). Bi and Sb alloys are extremely interesting due to two main reasons. First of all, these alloys for bulk are classified as topological insulators, therefore, investigation of their thin films is required because extends our knowledge about these materials. Moreover, electronic properties for these alloys can be controlled by changing concentration x. This is a very important aspect of a proposed experiment because we will be able to investigate how the properties of single-layer alloy influence the hybrid materials containing semimetal or semiconductor as the other layer.

In the course of proposed research we will investigate possibility of new hybrid materials' creation and try to understand their electronic properties. In particular, we will investigate how the properties of hybrid material depend on properties of its components. This will shed light on the potential construction of new hybrid materials whose properties were postulated a priori. Moreover, our research could show that also alloys could be found as single- or few-layer materials which gives additional possibilities of a potential control of hybrids' properties. It is also important to investigate and understand electronic structure of thin Bi1-xSbx which in future could help in designing quantum dots and wires possessing topologically protected edge or surface states. The subject of proposed investigations is original and new, therefore, it gives large chances to influence scientific community. In a longer perspective results of our investigations could influence a construction of new multifunctional elastic composites and electronic/optoelectronic devices by increasing their operation speed, guaranteeing their elasticity and high transparency.