The main aim of this project is to develop path toward construction, fabrication and measure Hall bar-like devices based on novel two dimensional (2D) topological insulators (TI) and their hybrids which undergo rapid degradation in air. The core problem which we aim to solve is: how to protect 2D TI against oxidation which we believe is the main factor behind their rapid degradation. In particular we will develop anti-oxidation method to protect 2D materials based on bismuth, antimony and their alloys i.e. alpha- and beta-forms of bismuthene and antimonene many of which are classified as 2D TIs. Achievement of this goal will allow us to use these 2D materials to fabricate few terminal devices for measurements of magnetotransport properties. This in turn will allow us to start exploration of physics related to transport properties in these novel 2D materials which might lead to confirmation or negation of their topological nature.

This project aims to establish path toward experimental investigations of 2D TIs. A major challenges these days are related to (i) synthesis of high-quality samples suitable for characterization and (ii) stabilization of their chemical and crystallographic structure after exposure to air. These two problems are main obstacles preventing fabrication of few terminal devices which would allow to experimentally explore properties of 2D TI. Currently some progress is observed in methods of synthesis of 2D TI but there is nearly no progress in measurements of transport properties due to rapid degradation of grown nanostructures in air. Solving this important problem will allow to construct few terminal devices based on 2D TIs and investigate their properties. In particular building field effect transistor, optoelectronic or spintronic devices, investigate properties of Majorana state or explore hallmarks of black hole physics in solid state devices which today remain only ideas without possibility of practical realization in 2D TI will be possible. Success of this project will boost experimental investigations of 2D TI and in some point in the future might be transformed into knowledge leading toward practical applications of 2D TIs.